Manufacturing and measuring method of semiconductor structure

The invention provides a method for manufacturing and measuring a plurality of semiconductor structures. The method comprises the following steps of: receiving a wafer, wherein the wafer is provided with a plurality of crystal grains; the plurality of semiconductor structures are respectively formed in the plurality of blocks of each crystal grain, each semiconductor structure is provided with a first fin array and a second fin array, and the second fin array is arranged above the first fin array; performing a pattern wafer geometry measurement on the wafer to obtain a displacement between a first fin of the first fin array and a first fin of the second fin array; and determining a state of the wafer according to the displacement. 本公开提供一种多个半导体结构的制造与测量方法。该方法包括下列步骤：接收一晶圆，该晶圆具有多个晶粒；分别形成该多个半导体结构在每一个晶粒的多个区块中，其中每一个半导体结构具有一第一鳍片阵列以及一第二鳍片阵列，该第二鳍片阵列位在该第一鳍片阵列上方；在该晶圆上执行一图案晶圆几何测量，以获得在该第一鳍片阵列的一第一鳍片与该第二鳍片阵列的一第一鳍片之间的一位移；以及依据该位移而确定该晶圆的一状态。