Method for fluorinating object to be fluorinated, and member fluorinated by method

The present invention relates to: a method for fluorinating an object to be fluorinated, which is capable of significantly improving productivity while achieving high density and high strength for various components and the like in a semiconductor process by means of a fluoride coating using atmosph...

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Bibliographische Detailangaben
Hauptverfasser:	OH SEUNG-YOUNG, CUI SUYING, YOO YOON JAE, CHOI EUN-YOUNG, JANG JU-HEE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to: a method for fluorinating an object to be fluorinated, which is capable of significantly improving productivity while achieving high density and high strength for various components and the like in a semiconductor process by means of a fluoride coating using atmospheric high-frequency plasma; the method is especially suitable for the normal etching rate of large-area semiconductor equipment. 本发明涉及一种氟化对象物的氟化加工方法以及由此方法氟化加工的部件，其能够通过基于大气压高频等离子体的氟化物的涂层实现对半导体工艺中的各种部件等的高密度以及高强度的同时显著提高生产率，尤其适用于大面积半导体设备的正常蚀刻率。