Semiconductor monocrystalline silicon wafer diamond wire cutting process method

The invention discloses a semiconductor monocrystalline silicon wafer diamond wire cutting process method. Raw and auxiliary materials used in the method comprise a cutting roller coating material, a wire passing wheel material, water-based cutting fluid and a diamond wire, and the cutting roller coating material is a high-molecular polyethylene material; the wire passing wheel coil is made of a high-molecular polyethylene material, the supporting frame is made of an aluminum alloy material, and the supporting frame and the high-molecular polyethylene coil are pressed into a whole through a high-temperature pressing method; the ratio of the water-based cutting fluid to the water is 1: 200 +/-20; the diamond wire is an electroplated diamond wire with a bus diameter of 90-110 [mu] m and a particle size of 5-12 [mu] m; a sectional type reciprocating cutting method is adopted, parameters such as reciprocating distance, cutting fluid temperature, cutting fluid flow and cutting line consumption are specifically set