Spin-orbit torque magnetic random access memory and operation method thereof
The invention discloses a spin-orbital moment magnetic random access memory, which comprises a plurality of memory units, and each memory unit comprises an orbital Hall layer suitable for generating orbital polarization flow under the action of in-plane current; the alloy material layer comprises an...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a spin-orbital moment magnetic random access memory, which comprises a plurality of memory units, and each memory unit comprises an orbital Hall layer suitable for generating orbital polarization flow under the action of in-plane current; the alloy material layer comprises an alloy material with spin-orbit conversion coefficients with opposite polarities, and is suitable for generating spin-polarized flow along a first spin direction and spin-polarized flow along a second spin direction opposite to the first spin direction under the action of in-plane current and orbital polarized flow flowing through the alloy material layer; the magnetic tunnel junction sequentially comprises a magnetic free layer, a tunneling insulating layer, a magnetic pinning layer and an antiferromagnetic layer or an artificial antiferromagnetic layer from bottom to top; a protective layer; wherein the spin polarization flow in the first spin direction and the spin polarization flow in the second spin direction, |
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