SiC Mosfet threshold voltage monitoring system and method
The invention provides a SiC Mosfet threshold voltage monitoring system and method, and belongs to the technical field of SiC Mosfet threshold voltage monitoring. A controller is respectively connected with a driving module and a switch module; the driving module is connected with the switch module;...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a SiC Mosfet threshold voltage monitoring system and method, and belongs to the technical field of SiC Mosfet threshold voltage monitoring. A controller is respectively connected with a driving module and a switch module; the driving module is connected with the switch module; the switch module is connected with the test loop; the test loop is connected with the threshold voltage acquisition module; the controller controls the driving module, the switch module acts through the driving module, and the action of the switch module enables the test loop to be switched between the test pulse preprocessing circuit and the threshold voltage detection circuit. According to the invention, the recovery effect is considered, the preprocessing pulse is applied before the test pulse, so that the measured threshold voltage is more accurate, the rapid switching between the test pulse preprocessing circuit and the threshold voltage test loop is realized, the pulse width and the power-on interval time a |
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