Wide band gap semiconductor device
This wide-gap semiconductor device is provided with a wide-gap semiconductor layer (10), and a metal electrode (20) provided on the wide-gap semiconductor layer (10). The metal electrode (20) has a single crystal layer (21) comprising a hexagonal close-packed structure (HCP) in an interface region o...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | This wide-gap semiconductor device is provided with a wide-gap semiconductor layer (10), and a metal electrode (20) provided on the wide-gap semiconductor layer (10). The metal electrode (20) has a single crystal layer (21) comprising a hexagonal close-packed structure (HCP) in an interface region on the metal electrode (20) side of the wide-gap semiconductor layer (10). The single crystal layer (21) has a specified element content region (22) containing O, S, P, or Se.
本发明的宽带隙半导体装置具有宽带隙半导体层10、以及设置在所述宽带隙半导体层10上的金属电极20。所述金属电极20在靠近所述宽带隙半导体层10的金属电极20侧的界面区域上具有由六方最密堆积结构(HCP)构成的单晶层21。所述单晶层21具有含O、S、P或Se的指定元素含量区域22。 |
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