Multi-scale physical etch modeling and methods thereof

Systems and methods for simulating a plasma etch process are disclosed. According to certain embodiments, a method for simulating a plasma etch process may include predicting a first characteristic of a particle of a plasma at a first scale based on a plurality of first parameters; predicting a second characteristic of the particle at a second scale based on modifications to the first characteristic caused by a plurality of second parameters; and simulating an etching characteristic of a feature based on the first characteristic and the second characteristic of the particles. A multi-scale physical etch model or a multi-scale data driven model may be used to simulate the plasma etch process. 披露了用于模拟等离子体蚀刻过程的系统和方法。根据某些实施例，用于模拟等离子体蚀刻过程的方法可以包括：基于多个第一参数，以第一尺度预测等离子体的粒子的第一特性；基于由多个第二参数引起的对所述第一特性的修改，以第二尺度预测所述粒子的第二特性；以及基于所述粒子的所述第一特性和所述第二特性来模拟特征的蚀刻特性。多尺度物理蚀刻模型或多尺度数据驱动模型可以用于模拟所述等离子体蚀刻过程。