Method for improving performance of alpha-In2Se3-based two-dimensional photoelectric detector

The invention discloses a method for improving the performance of an alpha-In2Se3-based two-dimensional photoelectric detector, and belongs to the field of photoelectric response detection. The mixed ion beam composed of Ar < 2 + > and CF22 < 2 + > is used for applying irradiation to the alpha-In2Se3-based two-dimensional photoelectric detector, it is found that the functional Ar < 2 + > ions create shallow-layer energy level vacancies in alpha-In2Se3 and the CF22 < 2 + > ions can passivate deep-layer energy level vacancies in alpha-In2Se3 at the same time, that is, the two ions synergistically exert respective advantages, the photoresponse speed of the alpha-In2Se3-based photoelectric detector is increased, and the photoelectric detector can be applied to the field of photoelectric detection. The light current of the alpha-In2Se3-based photoelectric detector is improved; in addition, the method limited by the invention is simple and easy to implement and has very high practicability. 本发明公开了一种提升α-In2Se3基二维光电探