Memory circuit detection method, device and system

The invention discloses a memory circuit detection method, device and system, and relates to the field of circuits, whether a voltage value is greater than a preset voltage value or not is judged by acquiring the voltage value of a memory capacitor of a to-be-detected memory circuit within the theor...

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Bibliographische Detailangaben
Hauptverfasser: TIAN MAOQIAO, JIE SHILIANG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a memory circuit detection method, device and system, and relates to the field of circuits, whether a voltage value is greater than a preset voltage value or not is judged by acquiring the voltage value of a memory capacitor of a to-be-detected memory circuit within the theoretical memory time of the to-be-detected memory circuit, if the voltage value is greater than the preset voltage value, the to-be-detected memory circuit is qualified, and if not, the to-be-detected memory circuit is qualified. The detection of the memory function of the memory circuit is realized, the detection is carried out before the memory circuit is used, and the working reliability of the memory circuit is improved. 本发明公开了一种记忆电路检测方法、装置及系统,涉及电路领域,通过在待测记忆电路的理论记忆时间内,获取待测记忆电路的的记忆电容的电压值,判断电压值是否大于预设电压值,若电压值大于预设电压值,则说明待测记忆电路合格,本发明实现了对记忆电路的记忆功能的检测,在使用记忆电路前进行检测,提高了记忆电路工作的可靠性。