Determination method of photoetching limit stress and method for improving photoetching process quality

The invention provides a method for determining photoetching limit stress and a method for improving photoetching process quality, and belongs to the technical field of semiconductor manufacturing. The method for determining the photoetching limit stress comprises the following steps of: determining a test pattern; providing a plurality of wafers on which the photoetching pre-process is executed; measuring the stress value from the center to the edge of each wafer; forming a test pattern at the position of the minimum stress value and the position of the maximum stress value; measuring a focusing value of a test pattern position on each wafer; the focusing values correspond to the corresponding stress values; and finding a critical focusing value exceeding the photoetching process window, taking the wafer with the critical focusing value as a target wafer, and taking the difference value between the maximum stress value and the minimum stress value on the target wafer as the limit stress of the photoetching p