High electron mobility transistor and manufacturing method thereof

The invention discloses a high-electron-mobility transistor and a manufacturing method thereof, and the manufacturing method of the high-electron-mobility transistor comprises the steps: providing a substrate, forming a channel layer, an active layer, a P-type III-V group compound material layer, a metal compound material layer, a hard mask material layer and a patterned photoresist layer, and covering the substrate with the channel layer, the active layer, the P-type III-V group compound material layer, the metal compound material layer, the hard mask material layer and the patterned photoresist layer. The method comprises the following steps of: carrying out dry etching on the hard mask material layer and the metal compound material layer by taking the patterned photoresist layer as a mask to form a hard mask layer and a metal compound layer; wherein a gap wall is formed by byproducts generated in the dry etching manufacturing process to surround the patterned photoresist, the hard mask layer and the metal