System and method for achieving unprecedented crystal quality in ultra-thin aluminum nitride thin films based on physical vapor deposition

A method for depositing an ultra-thin film onto a wafer is provided. The method includes the following steps. A sputtering chamber is provided, where the sputtering chamber is collectively defined by a wafer processing apparatus and a magnetron. A wafer is placed onto a wafer chuck of a wafer processing apparatus. The wafer chuck is moved to a first distance from the magnetron. A gas is introduced into the sputtering chamber such that the gas separates into a plasma, where the plasma includes gas ions. A first negative potential is applied to at least one sputtering target of a magnetron when a wafer chuck with a wafer is at a first distance from the magnetron. The wafer chuck is moved to a second distance from the magnetron. A second negative potential is applied to at least one sputtering target of the magnetron when the wafer chuck with the wafer is at a second distance from the magnetron. The wafer is removed from the wafer chuck after the second negative potential is applied to the at least one sputterin