Semiconductor device

According to one embodiment, a semiconductor device includes a stacked body and a columnar portion. The stacked body includes: a first stacked portion including a plurality of electrode layers stacked in a first direction with an insulator therebetween; a second stacked portion including a plurality...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TAKEKITA HIDETO, SHAMOTO REIKO, IZUMI TATSUO, SHIRAI KAITO, KANEMURA TAKAHISA, KONDO SHIGEO
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:According to one embodiment, a semiconductor device includes a stacked body and a columnar portion. The stacked body includes: a first stacked portion including a plurality of electrode layers stacked in a first direction with an insulator therebetween; a second stacked portion including a plurality of electrode layers stacked in a first direction with an insulator interposed therebetween, the second stacked portion being disposed apart from the first stacked portion in the first direction; and a connecting part that is provided between the first stacked part and the second stacked part and includes a high dielectric layer having a higher relative permittivity than the insulator. The columnar portion includes: a first portion provided in the first stacked portion and extending in a first direction of the stacked body; a second portion provided in the second stacked portion and extending in the first direction; and an intermediate portion provided in the connecting portion and connected to the first portion an