Radio frequency power amplifier and method for manufacturing doherdi power amplifier

The invention provides a radio frequency power amplifier and a method for manufacturing a Doherty power amplifier. The radio frequency power amplifier comprises at least one transistor, a harmonic elimination circuit and an impedance inverter. One end of the harmonic elimination circuit is directly...

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1. Verfasser: LA QI
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention provides a radio frequency power amplifier and a method for manufacturing a Doherty power amplifier. The radio frequency power amplifier comprises at least one transistor, a harmonic elimination circuit and an impedance inverter. One end of the harmonic elimination circuit is directly connected with the drain electrode of the transistor and serves as a part of a harmonic matching network of the transistor at the frequency of the second harmonic and/or the third harmonic of the fundamental frequency. The impedance inverter is used for carrying out impedance inversion operation on static impedance or modulation impedance under fundamental frequency on the premise that the impedance inverter is not affected by the harmonic elimination circuit. 本发明提出一种射频功率放大器和用于制作多赫蒂功率放大器的方法。所述射频功率放大器包括至少一电晶体、谐波消除电路以及阻抗逆变器。所述谐波消除电路的一端直接连接所述电晶体的汲极并且在基频的二次谐波及/或三次谐波的频率下作为所述电晶体的谐波匹配网路的一部分。所述阻抗逆变器用以在不受到谐波消除电路影响的前提下,于基频下对静态阻抗或调变阻抗进行阻抗逆变操作。