Graph boundary defect processing method and device, computer equipment and storage medium

The invention relates to the field of semiconductor photoetching processes, in particular to a pattern boundary defect processing method which comprises the following steps: acquiring a pattern to be processed, the pattern to be processed comprises a device unit pattern and a back pattern, and Star marks are arranged in the device unit pattern and at least part of the back pattern; selecting a back pattern with a Star mark and a device unit pattern adjacent to the selected back pattern; the selected back pattern and the selected device unit pattern are located in adjacent different pattern layers; lifting the selected back pattern to be positioned on the same pattern layer with the selected device unit pattern to obtain a to-be-corrected pattern; and screening out a Star mark violating a design rule from the to-be-corrected graph, and correcting the Star mark. According to the method, the defects of the fully depleted silicon-on-insulator (FDSOI) caused by the hierarchical structure of the back surface can be