Method for preparing tantalum carbide coating by CVD (chemical vapor deposition) method

The invention discloses a method for preparing a tantalum carbide coating by a CVD (Chemical Vapor Deposition) method. Relates to the field of tantalum carbide coating preparation. The method comprises the following specific steps: pretreating a substrate material; the pretreated substrate material is placed in a reaction chamber of a CVD furnace, a vacuum pump is started, the pressure in the furnace is pumped to 100 Pa or below, the vacuum pump is stopped, argon is filled, standing is conducted, the vacuum pump is started again, and the pressure in the furnace is pumped to 30 Pa or below; heating to reach a deposition temperature, and preserving heat; starting an evaporation device, setting temperature and pressure, sublimating the tantalum salt into a gaseous state, introducing argon as a carrier gas, carrying the gaseous tantalum salt into a mixing tank, and uniformly mixing the gaseous tantalum salt with hydrogen and propylene; and the mixed gas enters a CVD furnace, heating, gas pressure control, deposit