Grinding disc for grinding gallium nitride wafer
The invention discloses a grinding disc for grinding gallium nitride wafers. The grinding disc comprises a disc body, and the working surface of the disc body is provided with 2-3 concentric spiral grooves in the same direction, and the spiral grooves are digt. Di is the depth of the ith spiral groo...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention discloses a grinding disc for grinding gallium nitride wafers. The grinding disc comprises a disc body, and the working surface of the disc body is provided with 2-3 concentric spiral grooves in the same direction, and the spiral grooves are digt. Di is the depth of the ith spiral groove from outside to inside, di + 1 is the depth of the (i + 1) th spiral groove from outside to inside, and i is a positive integer. Compared with the prior art, the grinding efficiency of the grinding disc on the gallium nitride wafer can be improved to 32-40 [mu] m/h from existing 20-30 [mu] m/h, the overall yield is improved to 98% or above from about 95%, the roughness Ra (50 * 50 [mu] m) is reduced to about 240 nm from about 280 nm, and meanwhile the use amount of the diamond liquid is reduced.
本发明公开了一种用于氮化镓晶片研磨加工的研磨盘。该研磨盘包括盘体,盘体的工作表面具有2~3条同心同向的螺旋槽,且di>di+1,其中,di为由外向内数的第i条螺旋槽的槽深,di+1为由外向内数的第i+1条螺旋槽的槽深,i为正整数。与现有技术相比,采用本发明的研磨盘对氮化镓晶片的研磨效率可由现有的20-30μm/h提升至32-40μm/h,整体良率由95%左右提升至98%以上,粗糙度Ra(50*50um)由280nm左右降至240nm左右 |
---|