Method of detecting unqualified substrate processing events during chemical mechanical polishing

Embodiments of the present disclosure generally relate to chemical mechanical polishing (CMP) systems and processes for use in the manufacture of electronic devices. In particular, embodiments herein relate to methods of detecting unqualified substrate processing events during a polishing process. In one embodiment, a method of processing a substrate on a polishing system includes urging a surface of a silicon carbide substrate against a polishing pad in the presence of a polishing fluid, determining a temperature of the polishing pad using a temperature sensor located above a stage, monitoring the temperature of the polishing pad, and processing the substrate on the polishing system. And initiating a response using a controller of the polishing system if the change in the temperature of the polishing pad reaches a threshold. 本公开内容的实施方式一般涉及在电子装置的制造中使用的化学机械抛光系统(CMP)系统和处理。尤其是，本文的实施方式涉及在抛光处理期间检测不合格衬底处理事件的方法。在一个实施方式中，一种处理抛光系统上的衬底的方法包括以下步骤：在存在抛光流体的情况下促使碳化硅衬底的表面抵靠抛光垫，使用位于工作台上方的温度传感器来确定抛光垫的温度，监测抛光垫的温度，并且如果抛光垫温度的改变达到