Integrated circuit device including diode structure and method of forming same

Integrated circuit devices including diode structures and methods of forming the same are provided. The diode structure may include: a substrate; an upper semiconductor layer spaced apart from the substrate in a vertical direction; an upper thin semiconductor layer protruding in a first horizontal direction from a side surface of the upper semiconductor layer; a lower semiconductor layer between the substrate and the upper semiconductor layer and having the first conductivity type; a lower thin semiconductor layer protruding in a first horizontal direction from a side surface of the lower semiconductor layer; a first diode contact electrically connected to the lower semiconductor layer; and a second diode contact electrically connected to one of a portion of the substrate and the upper semiconductor layer. The portion of the substrate and the one of the upper semiconductor layers may have a second conductivity type. 提供了包括二极管结构的集成电路器件及其形成方法。二极管结构可以包括：衬底；上半导体层，在垂直方向上与衬底间隔开；上薄半导体层，从上半导体层的侧表面在第一水平方向上突出；下半导体层，在衬底和