Method for manufacturing semiconductor device

The present invention provides a method for manufacturing a semiconductor device in which the development of slip defects in a semiconductor wafer is suppressed. The method comprises: a region forming step of forming an impurity region containing a first impurity in the semiconductor wafer; an annealing step of annealing the semiconductor wafer while supporting the lower surface of the semiconductor wafer; and a removal step of removing at least a portion of the impurity region by removing a region including the lower surface of the semiconductor wafer. The first impurity may be oxygen. After the annealing step, the maximum concentration of the first impurity in the impurity region may be 1 * 1018/cm3 or more. 本发明提供抑制半导体晶片中的滑移缺陷发展的半导体装置的制造方法，其包括：在半导体晶片形成包含第一杂质的杂质区域的区域形成步骤；在支承着半导体晶片的下表面的状态下对半导体晶片进行退火的退火步骤；通过去除半导体晶片的包含下表面的区域来去除杂质区域的至少一部分的去除步骤。第一杂质可以是氧。在退火步骤之后，杂质区域的第一杂质的浓度的最大值可以为1×1018/cm3以上。