Light detection element and image sensor

The invention provides a light detection element and an image sensor. The light detection element comprises: a first electrode layer 11; a second electrode layer 12; a photoelectric conversion layer (13) provided between the first electrode layer (11) and the second electrode layer (12); an electron transport layer (21) provided between the first electrode layer (11) and the photoelectric conversion layer (13); and a hole transport layer (22) provided between the photoelectric conversion layer (13) and the second electrode layer (12), the photoelectric conversion layer (13) including quantum dots of a compound semiconductor including an Ag element and a Bi element, and the hole transport layer (22) including an organic semiconductor (A) including a predetermined structure. 本发明提供一种光检测元件及图像传感器，所述光检测元件具有：第1电极层11；第2电极层12；光电转换层13，设置于第1电极层11与第2电极层12之间；电子传输层21，设置于第1电极层11与光电转换层13之间；及空穴传输层22，设置于光电转换层13与第2电极层12之间，光电转换层13包括包含Ag元素和Bi元素的化合物半导体的量子点，空穴传输层22包括包含规定结构的有机半导体A。