Semiconductor device and forming method thereof

The semiconductor device includes a first semiconductor die. The semiconductor device includes a redistribution structure disposed over a first side of a first semiconductor die and including a plurality of layers. At least a first of the plurality of layers includes a first power/ground plane embedded in the dielectric material and configured to provide a first supply voltage for the first semiconductor die. The first power/ground plane surrounds a plurality of first conductive structures each operably coupled to the first semiconductor die and a plurality of second conductive structures dispersed around the plurality of first conductive structures. The embodiment of the invention also relates to a method for forming the semiconductor device. 半导体器件包括：第一半导体管芯。半导体器件包括：再分布结构，设置在第一半导体管芯的第一侧上方并且包括多个层。多个层中的至少第一个包括：第一电源/接地平面，嵌入在介电材料中并且配置为为第一半导体管芯提供第一供给电压。第一电源/接地平面包围每个可操作地耦接至第一半导体管芯的多个第一导电结构以及分散在多个第一导电结构周围的多个第二导电结构。本申请的实施例还涉及形成半导体器件的方法。