LED core particle etching method

The invention discloses an LED core particle etching method, which comprises the following steps: etching a core particle according to a preset cavity process temperature less than 0 DEG C to obtain a final etched core particle; nitrogen is used for purging the finally etched core particles to obtain finished core particles, the etching speed can be reduced and the etching stability can be improved by reducing the cavity process temperature and changing the purging gas after etching into nitrogen, so that the etching uniformity is improved, the metal etching depth of a chip source is within a set interval, and the yield of the chip source is improved. Regional over-etching does not occur, metal oxidation caused by the fact that bottom layer metal is exposed and makes contact with liquid in the follow-up manufacturing process is avoided, and the exposed metal after etching is prevented from being oxidized. 本发明公开一种LED芯粒刻蚀方法，按照预设腔体制程温度对芯粒进行刻蚀，得到最终刻蚀后的芯粒，所述预设腔体制程温度小于0℃；使用氮气对所述最终刻蚀后的芯粒进行吹扫，得到芯粒成品，通过降低腔体制程温度以及将刻蚀后的