Device for controlling trapped ions with low heat dissipation

Devices for controlling trapped ions with low heat dissipation. A device for controlling trapped ions includes a substrate. The first metal layer is disposed over the substrate. The insulating layer is disposed on the first metal layer. A structured second metal layer is disposed over the insulating...

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Bibliographische Detailangaben
Hauptverfasser: OHRT SUZANNE K, SCHOENHERR HANS H, OLES PETER, ZESSAR ARIK, DIETL MARTIN G, POWIN LUKAS, ROESSLER CHRISTOPH
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:Devices for controlling trapped ions with low heat dissipation. A device for controlling trapped ions includes a substrate. The first metal layer is disposed over the substrate. The insulating layer is disposed on the first metal layer. A structured second metal layer is disposed over the insulating layer. The structured second metal layer includes an electrode of an ion trap configured to trap ions in a space above the structured second metal layer. The electrode of the structured second metal layer and the first metal layer overlap each other. The device further includes a void space in the insulating layer between the electrodes of the first metal layer and the structured second metal layer, the void space including a vacuum at least during operation of the device. 具有低热耗散的用于控制俘获离子的器件。一种用于控制俘获离子的器件包括衬底。第一金属层设置在衬底之上。绝缘层设置在第一金属层之上。结构化的第二金属层设置在绝缘层之上。结构化的第二金属层包括离子阱的电极,离子阱被配置成俘获结构化的第二金属层上方空间中的离子。结构化的第二金属层的电极和第一金属层彼此重叠。该器件还包括在第一金属层和结构化的第二金属层的电极之间的绝缘层中的空隙空间,空隙空间至少在器件的操作期间包括真空。