Growth method of cadmium zinc telluride crystal

The invention provides a growth method of a tellurium-zinc-cadmium crystal, which comprises the following steps: placing a quartz crucible filled with materials in a pulling furnace, melting raw materials to obtain a mixed melt of tellurium, zinc and cadmium, contacting a tellurium-zinc-cadmium seed crystal with the mixed melt, and pulling upwards to grow the tellurium-zinc-cadmium single crystal. According to the method, the low-dislocation cadmium zinc telluride single crystal can be obtained, the single crystal proportion is relatively high, the bicrystal diffraction half-peak width is relatively small, the micro-precipitation phase is relatively few, the resistivity is relatively high, the dislocation corrosion pit density is relatively low, and the leakage current is relatively low. 本发明提供一种碲锌镉晶体的生长方法，包括：将装料的石英坩埚置于提拉炉中，原料熔融得到碲、锌和镉的混合熔体，将碲锌镉籽晶接触混合熔体，向上提拉生长碲锌镉单晶。该方法能获得低位错碲锌镉单晶，单晶比例较高，双晶衍射半峰宽较小、微沉淀相较少、电阻率较高、位错腐蚀坑密度较小和漏电流较小。