Ga2O3 film forbidden band width regulation and control process method

The invention discloses a process method for regulating and controlling the forbidden bandwidth of a Ga2O3 film, which adopts a co-sputtering method, selects a proper dopant and realizes the controllable regulation of the forbidden bandwidth of the Ga2O3 film. Ga2O3 and a ZnO target material, a B2O3 target material, an In2O3 target material or an Al2O3 target material serving as a doping agent are respectively arranged on a radio frequency target position, and a doped Ga2O3 film is obtained by utilizing a magnetron co-sputtering method, so that the forbidden band width of the Ga2O3 film is regulated and controlled. The forbidden bandwidth regulation and control direction can be controlled by changing the types of elements doped in the Ga2O3 thin film. The doping amount of elements in the Ga2O3 film can be controlled by changing the sputtering power of the target, so that the change of the forbidden bandwidth of the Ga2O3 film is controlled. And the obtained Ga2O3 film is subjected to annealing treatment, so t