Porcelain insulator semiconductor glaze formula and preparation method thereof

The invention discloses a porcelain insulator semiconductor glaze formula and a preparation method thereof. The porcelain insulator semiconductor glaze formula comprises the following raw materials in parts by mass: 10-20 parts of zinc oxide, 5-10 parts of alumina powder, 5-10 parts of lime, 15-20 parts of potassium feldspar, 25-30 parts of quartz, 10-15 parts of kaolin, 5-10 parts of talcum powder, 10-20 parts of perlite, 5-10 parts of vermiculite, 3-8 parts of zirconium silicate and 10-18 parts of a gloss agent. According to the semiconductor glaze prepared by the preparation method disclosed by the invention, the relatively strong corrosion resistance of the semiconductor glaze can be improved, and the anti-fouling performance of the semiconductor glaze can be improved by adding the zinc oxide and the aluminum oxide powder into the raw materials and adding the metal oxide. 本发明公开了一种瓷绝缘子半导体釉配方及其制备方法，包括以下质量份的原料组成：氧化锌10-20份、氧化铝粉5-10份、石灰5-10份、钾长石15-20份、石英25-30份、高岭土10-15份、滑石粉5-10份、珍珠岩10-20份、蛭石5-10份、硅酸锆3-8份、光泽剂10