SYSTEM, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

The invention provides a system, a substrate processing apparatus, and a method of manufacturing a semiconductor device, and aims to suppress adhesion of by-products in a pump. The present invention is provided with: a processing chamber for processing an object to be processed with a gas; an exhaus...

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Bibliographische Detailangaben
Hauptverfasser: SAKATA MASAKAZU, SAKASHITA MASAMICHI, TAKAHASHI RYOSUKE, YACHI MASAMICHI
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention provides a system, a substrate processing apparatus, and a method of manufacturing a semiconductor device, and aims to suppress adhesion of by-products in a pump. The present invention is provided with: a processing chamber for processing an object to be processed with a gas; an exhaust device, which is provided with a housing having a rotor therein, and which exhausts gas used in the processing chamber; a gas supply unit that supplies an inert gas to the exhaust device without passing through the processing chamber; and a control unit that controls the gas supply unit and supplies a predetermined amount of the inert gas into the housing after processing the target to be processed, and sets the temperature of the rotor to a target temperature or higher. 本发明提供一种系统、基板处理装置、以及半导体器件的制造方法,其目的在于抑制泵内部的副生成物的附着。本发明提供一种构成,其具备:用气体对处理对象进行处理的处理室;排气装置,具备在内部设有转子的壳体,将在处理室内使用的气体排出;不经由处理室地向排气装置供给非活性气体的气体供给部;以及控制部,其在对处理对象进行了处理之后,控制气体供给部并将规定量的非活性气体供给至壳体内,将转子的温度设为目标温度以上。