Asymmetric exhaust pumping plate design for semiconductor processing chamber

An exemplary semiconductor processing chamber may include a chamber body including a sidewall and a susceptor. The chamber may include a substrate support extending through a base of the chamber body. The substrate support may include a support platform configured to support a semiconductor substrat...

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Hauptverfasser: AKSHAY GUNAJI, KULKARNI MAYUR G
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:An exemplary semiconductor processing chamber may include a chamber body including a sidewall and a susceptor. The chamber may include a substrate support extending through a base of the chamber body. The substrate support may include a support platform configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platform. The chamber may include a forestage conduit offset from a center of the base for exhausting gas from the chamber body, and an exhaust space coupled to the forestage conduit. The chamber may include a pumping plate including a shaft extending through a central bore, and further including an outlet bore for directing at least a portion of the gas from the chamber body to the exhaust space. The outlet orifice may be disposed at a location opposite the foreline conduit to reduce non-uniformity of the airflow. 示例性半导体处理腔室可包括腔室主体,腔室主体包括侧壁和基座。腔室可包括延伸穿过腔室主体的基座的基板支撑件。基板支撑件可包括被配置成支撑半导体基板的支撑平台。基板支撑件可包括与支撑平台耦接的轴。腔室可包括偏离基座的中心的前级导管以及耦接到前级导管的排气空间,前级导管用