Three-dimensional flash memory and forming method thereof

The invention provides a three-dimensional flash memory. The three-dimensional flash memory comprises a substrate, a stacking structure, a stop layer, two slit channels, a plurality of vertical channel structures and a plurality of slit holes, the stacked structure is disposed on the substrate. The stacked structure comprises a plurality of dielectric layers and a plurality of conductor layers which are alternately stacked. The stop layer is disposed between the substrate and the stack structure. The two slit channels penetrate through the stack structure to expose the stop layer. The plurality of vertical channel structures are arranged between the two slit channels and penetrate through the stack structure and the stop layer. The plurality of slit openings are discretely disposed among the plurality of vertical channel structures and penetrate through the stack structure to expose the stop layer. The invention further provides a forming method of the three-dimensional AND gate flash memory. 本发明提供一种三维快闪存储器包括