SOI-based multi-quantum well waveguide structure and preparation method thereof

The invention provides an SOI-based multi-quantum-well waveguide structure and a preparation method thereof.The SOI-based multi-quantum-well waveguide structure comprises an SOI substrate, an N-type buffer layer, a multi-quantum-well waveguide layer, a P-type cladding and a P-type electrode layer.The III-V family multi-quantum-well waveguide structure is bonded to the SOI substrate to form a brand new silicon-based optical waveguide; the optical receiver can realize radiation resistance, high speed, high responsivity and low loss, provides an implementation way of an on-chip photon integrated circuit, and provides a basis for realizing large-scale or even super-large-scale silicon photon integration compatible with a CMOS (Complementary Metal Oxide Semiconductor) process, so that the development of a high-density data transmission system with high reliability, low loss and low cost can be promoted. 本发明提供一种SOI基多量子阱波导结构及其制备方法，SOI基多量子阱波导结构包括SOI衬底、N型缓冲层、多量子阱波导层、P型包层及P型电极层，本发明将具有Ⅲ-Ⅴ族多量子阱波导结构键合在SOI衬底上，形成一种全新的硅基光波导，