Si nanowire array-4H-SiC nanowire array, preparation method thereof and application of nanowire array-4H-SiC nanowire array in ultraviolet photoelectric detector

The invention belongs to the technical field of photoelectricity, and particularly relates to a Si nanowire array-4H-SiC nanowire array and a preparation method and application thereof in an ultraviolet photoelectric detector, and the ultraviolet photoelectric detector comprises a metal electrode, a single crystal Si substrate, the Si nanowire array, the 4H-SiC nanowire array and a metal electrode from bottom to top. The preparation method of the ultraviolet photoelectric detector comprises the following steps: (1) pretreating silicon carbide and a silicon single crystal wafer; (2) growing and transferring a silicon carbide nanowire array; (3) growing a silicon nanowire array; (4) welding the silicon nanowire array and the silicon carbide nanowire array to prepare the ultraviolet photoelectric detector; the preparation method of the ultraviolet photoelectric detector is simple and low in cost, the pn junction structure formed by the Si-4H-SiC nanowire array has high responsivity, the light utilization rate is