Heterostructured material contacts for 2D transistors

Transistors, devices, systems, and methods are discussed relative to transistors including a 2D material channel and a heterogeneous 2D material on the 2D material channel and coupled to source and drain metals, and fabrication thereof. The 2D material channel of the transistor allows gate length sc...

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Hauptverfasser:	GOSAVI TANAY, AVCI UYGAR, DORO CHRISTOPHER, SHIVARAMAN SHRIRAM, PENUMAKHIAH ARAVINDHAN V, MAXEY, KEVIN, NAYLOR CHRISTOPHER, O 'BRIEN KEVIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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