Heterostructured material contacts for 2D transistors

Transistors, devices, systems, and methods are discussed relative to transistors including a 2D material channel and a heterogeneous 2D material on the 2D material channel and coupled to source and drain metals, and fabrication thereof. The 2D material channel of the transistor allows gate length scaling, improved switching performance, and other advantages, and the heterogeneous 2D material improves the contact resistance of the transistor device. 相对于包括2D材料沟道和2D材料沟道上的异质2D材料并且被耦合到源极和漏极金属的晶体管、及其制造，讨论了晶体管、设备、系统和方法。晶体管的2D材料沟道允许栅极长度缩放、改进的开关性能和其它优点，并且异质2D材料改善了晶体管设备的接触电阻。