Novel GaN epitaxial structure and preparation method and application thereof

The invention discloses a novel GaN epitaxial structure and a preparation method and application thereof. The novel GaN epitaxial structure comprises an LED-on-FET structure and an FET-on-LED structure, and the LED and the FET in the structure are integrated on the same substrate in a monolithic mode and share the same material platform. According to the invention, a novel LED-on-FET and FET-on-LED epitaxial structure is grown in situ on a substrate through an MOCVD method, and the novel GaN epitaxial structure is used as a raw material to prepare a monolithic vertical integrated light-emitting device which is applied to active matrix Micro-LED and Mini-LED display screens. According to the invention, the technical problem that drive circuits and LED pixels on different substrates must be transferred, bonded and integrated in the existing active matrix MicroLED and MiniLED display screen process is solved, and the method has the potential of industrial application. 本发明公开了一种新型GaN外延结构及其制备方法和应用。该新型GaN外延结构包括LED-o