Capacitor having conductive layer coupled to metal layer of capacitor

Embodiments described herein may relate to devices, processes, and techniques related to MIM capacitors having a multi-trench structure to increase charge density, where the dielectric of the MIM capacitor includes a perovskite-based material. In embodiments, the first conductive layer may be coupled with a top metal layer of the MIM, and/or the second conductive layer may be coupled with a bottom metal layer of the MIM to reduce RC effects. Other embodiments may be described and/or claimed. 本文描述的实施例可以涉及与具有多沟槽结构以增加电荷密度的MIM电容器相关的装置、过程和技术，其中，MIM电容器的电介质包括基于钙钛矿的材料。在实施例中，第一导电层可以与MIM的顶部金属层耦接，和/或第二导电层可以与MIM的底部金属层耦接，以减小RC效应。可以描述和/或要求保护其他实施例。