Semiconductor arrangement, semiconductor structure and method of forming same

An exemplary semiconductor structure includes a device substrate having a first side and a second side. A dielectric layer is disposed over the first side of the device substrate. A via extends in a first direction through the dielectric layer and through the device substrate from a first side to a second side. A guard ring is disposed in the dielectric layer and around the via. The guard ring includes metal layers stacked in a first direction. The metal layer includes a first sidewall and a second sidewall. The first sidewall forms an inner sidewall of the guard ring. An overlapping portion between the first sidewalls of the metal layer is less than about 10 nm. The overlapping portion is in a second direction different from the first direction. The embodiment of the invention also relates to a semiconductor arrangement and a method of forming a semiconductor structure. 示例性半导体结构包括具有第一侧和第二侧的器件衬底。介电层设置在器件衬底的第一侧上方。通孔沿第一方向延伸穿过介电层并且穿过器件衬底从第一侧延伸至第二侧。保护环设置在介电层中和通孔周围。保护环包括沿第一方向堆叠的金属层。金属层包括第一侧壁和第二侧壁。第一侧壁形成保护环的内侧壁。金属层