Method for improving wafer warping and negative bias temperature instability effect

The invention provides a method for improving wafer warping and negative bias temperature instability effect, which comprises the following steps: a contact etching stop layer is formed on the surface of a wafer by using a chemical vapor deposition process, and the content of hydrogen atoms in the formed contact etching stop layer is greater than 8E21/cm < 2 >. According to the invention, the negative bias temperature instability effect of an existing device is improved, and the problem of wafer warping caused by large film stress of the contact etching stop layer is solved. 本发明提供一种改善晶圆翘曲及负偏置温度不稳定性效应的方法，所述方法包括：利用化学气相沉积工艺于晶圆表面形成接触蚀刻停止层，且形成的所述接触蚀刻停止层中氢原子的含量大于8E21/cm2。通过本发明改善了现有器件负偏置温度不稳定性效应，及因接触蚀刻停止层的薄膜应力较大而导致的晶圆翘曲的问题。