FAULT DETECTION METHOD AND PLASMA PROCESSING APPARATUS

The invention relates to a fault detection method and a plasma processing device. The present invention is a fault detection method for an impedance adjustment unit between a plurality of local windows and a ground in a plasma processing apparatus, the apparatus comprising: a metal window that divid...

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Bibliographische Detailangaben
Hauptverfasser: SASANAMI YUSAKU, OGAWA JUNICHI, TOMITA NAOHIRO, SAITO HITOSHI, YAMASHINA ISAKU, NETSU TADAHITO, UEMATSU HARUSHI, MACHIYAMA WATARU
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to a fault detection method and a plasma processing device. The present invention is a fault detection method for an impedance adjustment unit between a plurality of local windows and a ground in a plasma processing apparatus, the apparatus comprising: a metal window that divides the inside of a processing container into an antenna chamber and a processing chamber, the metal window having a plurality of local windows; the antenna is used for generating inductively coupled plasma; and an electrostatic chuck, in which the impedance adjustment unit includes a plurality of capacitance elements between the plurality of local windows and the ground, the method including: applying a DC voltage to the electrostatic chuck; starting the supply of high-frequency power for a power source and/or high-frequency power for a bias voltage; high-frequency power for power supply and high-frequency power for bias voltage are stably supplied; a capacitance element voltage measurement unit that measures a cap