Ending process for reducing crack dislocation of single crystal silicon rod

The invention provides an ending process for reducing crack dislocation of a single crystal silicon rod, which comprises the following steps: S1, instantaneously increasing the heating power, instantaneously reducing the pulling speed to a first pulling speed, reducing the first pulling speed to a s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HAN KAI, LU YAO, GU SHOUWEI, YUE CAIGUANG, GUAN YUNSHENG, WU ZHIJUN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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