Ending process for reducing crack dislocation of single crystal silicon rod

The invention provides an ending process for reducing crack dislocation of a single crystal silicon rod, which comprises the following steps: S1, instantaneously increasing the heating power, instantaneously reducing the pulling speed to a first pulling speed, reducing the first pulling speed to a second pulling speed at a first accelerated speed, converting crystal transition and crucible transition into crystal transition and crucible transition of an equal-diameter section, and keeping unchanged first crystal transition and first crucible transition, the diameter of the single crystal is gradually reduced; s2, the second pulling speed is increased to a third pulling speed at a second accelerated speed, the first crystal rotation and the first crucible rotation are increased to a second crystal rotation and a second crucible rotation at a third accelerated speed, and the diameter of the single crystal is continuously reduced; and S3, the third pulling speed is increased to a fourth pulling speed at the seco