Ending process for reducing crack dislocation of single crystal silicon rod
The invention provides an ending process for reducing crack dislocation of a single crystal silicon rod, which comprises the following steps: S1, instantaneously increasing the heating power, instantaneously reducing the pulling speed to a first pulling speed, reducing the first pulling speed to a s...
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| creator | HAN KAI LU YAO GU SHOUWEI YUE CAIGUANG GUAN YUNSHENG WU ZHIJUN |
| description | The invention provides an ending process for reducing crack dislocation of a single crystal silicon rod, which comprises the following steps: S1, instantaneously increasing the heating power, instantaneously reducing the pulling speed to a first pulling speed, reducing the first pulling speed to a second pulling speed at a first accelerated speed, converting crystal transition and crucible transition into crystal transition and crucible transition of an equal-diameter section, and keeping unchanged first crystal transition and first crucible transition, the diameter of the single crystal is gradually reduced; s2, the second pulling speed is increased to a third pulling speed at a second accelerated speed, the first crystal rotation and the first crucible rotation are increased to a second crystal rotation and a second crucible rotation at a third accelerated speed, and the diameter of the single crystal is continuously reduced; and S3, the third pulling speed is increased to a fourth pulling speed at the seco |
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s2, the second pulling speed is increased to a third pulling speed at a second accelerated speed, the first crystal rotation and the first crucible rotation are increased to a second crystal rotation and a second crucible rotation at a third accelerated speed, and the diameter of the single crystal is continuously reduced; and S3, the third pulling speed is increased to a fourth pulling speed at the seco</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230328&DB=EPODOC&CC=CN&NR=115852474A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230328&DB=EPODOC&CC=CN&NR=115852474A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HAN KAI</creatorcontrib><creatorcontrib>LU YAO</creatorcontrib><creatorcontrib>GU SHOUWEI</creatorcontrib><creatorcontrib>YUE CAIGUANG</creatorcontrib><creatorcontrib>GUAN YUNSHENG</creatorcontrib><creatorcontrib>WU ZHIJUN</creatorcontrib><title>Ending process for reducing crack dislocation of single crystal silicon rod</title><description>The invention provides an ending process for reducing crack dislocation of a single crystal silicon rod, which comprises the following steps: S1, instantaneously increasing the heating power, instantaneously reducing the pulling speed to a first pulling speed, reducing the first pulling speed to a second pulling speed at a first accelerated speed, converting crystal transition and crucible transition into crystal transition and crucible transition of an equal-diameter section, and keeping unchanged first crystal transition and first crucible transition, the diameter of the single crystal is gradually reduced; 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s2, the second pulling speed is increased to a third pulling speed at a second accelerated speed, the first crystal rotation and the first crucible rotation are increased to a second crystal rotation and a second crucible rotation at a third accelerated speed, and the diameter of the single crystal is continuously reduced; and S3, the third pulling speed is increased to a fourth pulling speed at the seco</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Ending process for reducing crack dislocation of single crystal silicon rod |
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