Atomic layer deposition multi-cavity single power supply control system
The invention relates to the technical field of semiconductor manufacturing, in particular to an atomic layer deposition three-cavity single-power-supply control system. The invention provides an atomic layer deposition multi-cavity single-power-supply control system, which comprises a control modul...
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| creator | LIANG HEMING ZHANG SAIQIAN MAO PENGFEI CHEN YAQI MEI SHENGLI WU JIE WANG TIESHUANG DENG LEI |
| description | The invention relates to the technical field of semiconductor manufacturing, in particular to an atomic layer deposition three-cavity single-power-supply control system. The invention provides an atomic layer deposition multi-cavity single-power-supply control system, which comprises a control module, a radio frequency power supply, a radio frequency impedance, a plurality of solid-state relays and corresponding radio frequency loops and reaction cavities, wherein the control module is used for switching on or off the solid-state relays; the control module is used for controlling the on-off frequency of a switch of the solid-state relay, setting an energy supply time period according to an atomic layer deposition process, and providing radio frequency energy for each radio frequency loop in a time-sharing sequence; and the radio frequency loop provides radio frequency energy for the corresponding reaction cavity by utilizing the on-off of the solid-state circuit breaker so as to carry out an atomic layer depo |
| format | Patent |
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The invention provides an atomic layer deposition multi-cavity single-power-supply control system, which comprises a control module, a radio frequency power supply, a radio frequency impedance, a plurality of solid-state relays and corresponding radio frequency loops and reaction cavities, wherein the control module is used for switching on or off the solid-state relays; the control module is used for controlling the on-off frequency of a switch of the solid-state relay, setting an energy supply time period according to an atomic layer deposition process, and providing radio frequency energy for each radio frequency loop in a time-sharing sequence; and the radio frequency loop provides radio frequency energy for the corresponding reaction cavity by utilizing the on-off of the solid-state circuit breaker so as to carry out an atomic layer depo</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230328&DB=EPODOC&CC=CN&NR=115852340A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230328&DB=EPODOC&CC=CN&NR=115852340A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIANG HEMING</creatorcontrib><creatorcontrib>ZHANG SAIQIAN</creatorcontrib><creatorcontrib>MAO PENGFEI</creatorcontrib><creatorcontrib>CHEN YAQI</creatorcontrib><creatorcontrib>MEI SHENGLI</creatorcontrib><creatorcontrib>WU JIE</creatorcontrib><creatorcontrib>WANG TIESHUANG</creatorcontrib><creatorcontrib>DENG LEI</creatorcontrib><title>Atomic layer deposition multi-cavity single power supply control system</title><description>The invention relates to the technical field of semiconductor manufacturing, in particular to an atomic layer deposition three-cavity single-power-supply control system. 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The invention provides an atomic layer deposition multi-cavity single-power-supply control system, which comprises a control module, a radio frequency power supply, a radio frequency impedance, a plurality of solid-state relays and corresponding radio frequency loops and reaction cavities, wherein the control module is used for switching on or off the solid-state relays; the control module is used for controlling the on-off frequency of a switch of the solid-state relay, setting an energy supply time period according to an atomic layer deposition process, and providing radio frequency energy for each radio frequency loop in a time-sharing sequence; and the radio frequency loop provides radio frequency energy for the corresponding reaction cavity by utilizing the on-off of the solid-state circuit breaker so as to carry out an atomic layer depo</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Atomic layer deposition multi-cavity single power supply control system |
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