SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Provided is a semiconductor device capable of achieving high reliability while reducing parasitic capacitance and capable of preventing gate leakage defects while suppressing an increase in manufacturing cost. The semiconductor device includes a substrate having a buried insulating film and a semiconductor layer provided on the buried insulating film and on which a semiconductor element is formed, a wiring provided on the semiconductor layer and having a central portion of the semiconductor layer extending to each end portion of the semiconductor layer when the substrate is viewed from above, a semiconductor device includes a semiconductor layer, a source contact via and a drain contact via disposed on the semiconductor layer, and a protruding portion disposed near a region where an end portion of the semiconductor layer intersects a wiring of a gate electrode, the protruding portion including the same material as a material of the semiconductor layer and protruding outward from a side surface of the semicond