Plasma spraying parameter determination method

The invention discloses a plasma spraying parameter determination method, which belongs to the technical field of computers, and comprises the following steps: sequentially determining and optimizing spraying parameters by using multiple stages, according to the invention, the optimal parameter is f...

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Bibliographische Detailangaben
Hauptverfasser: ZHOU YUWEI, GU RENBAO, HAN WEINAN, ZHU WENJIAN, LIU XINGMING, XUE HONGYU, GU PENGMING, XU GUOJUN, LI WEIDONG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a plasma spraying parameter determination method, which belongs to the technical field of computers, and comprises the following steps: sequentially determining and optimizing spraying parameters by using multiple stages, according to the invention, the optimal parameter is found in the plasma spraying parameter data test, and the corrosion influence degree of the plasma etching process is reduced by reducing the test times of the etching rate, so that the test quality is ensured, and the missing of important influence factors is avoided; the problem that the optimal parameters of the equipment cannot be really found due to the fact that a short plate of a traditional orthogonal experiment is only limited to the optimal combination of factor levels and is an interval with a large range is solved. 本发明公开了一种等离子喷涂参数确定方法,属于计算机技术领域,其中所述方法包括使用多阶段依次确定并优化喷涂参数,通过本发明使得对等离子喷涂参数数据试验找到最优的参数的同时通过减少刻蚀速率的测试次数来降低等离子体刻蚀工艺的腐蚀影响程度,保证试验质量,避免遗漏重要影响因素,弥补了传统正交实验的短板只局限于因子水平的最佳组合,为一个范围较大的区间,并不能真正找到设备的最佳参数的问题。