Silicon carbide crystal growing device, filtering material thereof and preparation method of filtering material

The invention discloses a silicon carbide crystal growth device, a filtering material thereof and a preparation method of the filtering material, the preparation method comprises a punching step, a dipping curing step and a sintering step, the punching step is as follows: a plurality of through holes are formed in a tantalum piece, and the diameter of each through hole is 0.01 mm-1 mm; the dipping and curing step is as follows: dipping the tantalum piece with holes into a resin solution dispersed with aquadag, and curing the resin on the surface of the tantalum piece after full dipping; the sintering step is that the tantalum piece with the cured resin layer is sintered to obtain the tantalum carbide ceramic material. According to the silicon carbide crystal growth device and the filtering material, the problem of carbon wrapping caused by imbalance of the silicon-carbon ratio in the crystal growth process can be effectively avoided, and the crystal quality is improved. 本申请公开了一种碳化硅晶体生长装置、其过滤材料以及过滤材料的制备方法，其制备方