Silicon-based negative electrode material and preparation method and application thereof

The invention discloses a silicon-based negative electrode material and a preparation method and application thereof.The preparation method comprises the steps that carbon-rich siloxane, a surfactant and a NaOH solution are mixed, stirred for 2-6 h at the temperature of 50-90 DEG C and cooled to the room temperature, SiO particles are added, ultrasonic treatment and stirring are conducted, a reaction solution A is obtained, acetic acid is added into the reaction solution A for demulsification treatment, a reaction solution B is obtained, the reaction solution B is centrifuged, washed and dried, and the silicon-based negative electrode material is obtained. Preparing a SiO (at) SiOC precursor; placing the SiO (at) SiOC precursor in a protective atmosphere, and calcining the SiO (at) SiOC precursor at a high temperature of 600-1000 DEG C for 1-4 hours to prepare SiO (at) SiOC microsphere particles; and mixing the SiO-coated SiOC microsphere particles with a conductive additive and an adhesive, and carrying out