Rapid silicon wafer heat treatment method for improving clean area and oxygen precipitation density

The invention relates to a silicon wafer rapid heat treatment method for improving a clean area and oxygen precipitation density, which belongs to the technical field of semiconductor processing, and comprises the following operation steps: 1, in a mixed atmosphere of inert gas and H2, heating a sil...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KUANG MENGJIE, YE SHAOFENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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