Rapid silicon wafer heat treatment method for improving clean area and oxygen precipitation density

The invention relates to a silicon wafer rapid heat treatment method for improving a clean area and oxygen precipitation density, which belongs to the technical field of semiconductor processing, and comprises the following operation steps: 1, in a mixed atmosphere of inert gas and H2, heating a silicon wafer to 1230-1270 DEG C according to a concentration ratio of the inert gas to the H2 of (3-1): 1; and 2, carrying out heat preservation on the silicon wafer at 1270 DEG C for 30 seconds or more. And 3, during cooling, the cooling rate of the high-temperature stage is kept stable, the temperature is reduced by 650-700 DEG C, and then the temperature is continuously reduced to the normal temperature. By controlling the thickness of the clean area, the oxygen precipitation density of the gettering area is improved, and meanwhile the COP density of the surface is reduced. 本发明涉及一种提高洁净区和氧沉淀密度的硅片快速热处理方法，所属半导体加工技术领域，包括如下操作步骤：第一步：在惰性气体和H2的混合气氛中，将硅片加热到1230℃～1270℃，且惰性气体与H2的浓度比例为3～1:1。第二步：将硅片在1270℃条件下保温30秒及以上。第三步：降温时，高温