Method and device for growing heterointerface by molecular beam epitaxy

The invention discloses a method and a device for molecular beam epitaxy growth of a heterogeneous interface, the device comprises an electron beam regulation and control system and an electromagnetic regulation and control system, and the molecular beam epitaxy growth of the heterogeneous interface is realized according to the structural change of a to-be-prepared heterogeneous interface film, the component change of a material or the gradient change of doping concentration. And the duty ratio frequencies of the electron beam regulation and control system and the electromagnetic regulation and control system are reasonably set to realize coordinated regulation and control between the two systems. According to the technology disclosed by the invention, the component or doping concentration of the heterogeneous interface material is regulated and controlled in a non-mechanical manner, the regulation and control speed is very high, and a complex and diversified heterogeneous interface structure can be realized